SK Hynix Supplies Advanced HBM4E Samples Early, Bolstering K-Memory's Lead

SK Hynix has started supplying samples of its 7th-generation High Bandwidth Memory (HBM), HBM4E, to major customers, accelerating its development timeline. This early delivery positions the South Korean memory industry to maintain its technological edge in the rapidly evolving AI semiconductor market.

The company announced it has showcased HBM4E 12-layer samples to clients, moving up its planned sample supply for the second half of the year. This proactive approach follows Samsung Electronics' similar early sample delivery to customers last month. SK Hynix aims for mass production of HBM4E in 2027, indicating a swift development cycle.

HBM4E is designed to significantly enhance performance and power efficiency compared to its predecessor, HBM4. SK Hynix claims data processing speeds of up to 16 Gbps per pin and over 20% improvement in energy efficiency. The company achieved this by applying its most advanced 10nm-class 6th-generation fine process (1c) to the core DRAM, the most advanced commercial DRAM process available.

SK Hynix is further differentiating its HBM4E through the "Advanced MR-MUF" process, which injects and solidifies a protective liquid material between stacked chip layers. This technique enables a 48GB capacity for 12-layer products while reducing heat generation compared to HBM4. The company plans to leverage its extensive experience in HBM production, from HBM3 to HBM4, to deliver optimized memory solutions tailored to customer needs.

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We will preemptively realize the value the market demands through cooperation with partners and solidify our technological leadership as a full-stack AI memory creator.