Kookmin University master's student publishes paper as first author in international journal
Translated from Korean, summarized and contextualized by DistantNews.
At a glance
- A master's student from Kookmin University has been named the first author of a paper published in the prestigious ACS Applied Electronic Materials journal.
- The research, focusing on next-generation non-volatile memory devices, was recognized with a supplementary cover image for its effective visualization of the study's core content.
- The findings are expected to contribute to advancements in low-power, non-volatile memory technologies for applications like AI semiconductors and neuromorphic computing.
Ha Sang-hoon, a master's student at Kookmin University's Graduate School of Intelligent Semiconductor and Display Engineering, has achieved a significant academic milestone by being named the first author of a research paper published in the July 2026 issue of ACS Applied Electronic Materials. This international journal, published by the American Chemical Society (ACS), focuses on research in electronic materials and semiconductor devices.
Adding to the distinction, an image visualizing the core content and academic significance of Ha's research was selected as a Supplementary Cover Image for the journal. This feature highlights the paper's importance and makes it more accessible on the journal's website and online issue pages.
The research, conducted within Kookmin University's Semiconductor Device and Integrated Circuit Lab (S!LK), led by Professor Lee Yoon-jung as the corresponding author, focused on enhancing the performance and durability of ferroelectric tunnel junction (FTJ) devices. These devices are considered key components for next-generation non-volatile memory.
The team employed a dual approach, combining ferroelectric domain engineering with interfacial oxygen vacancy control. By utilizing a cobalt oxide (CoOx) interfacial layer as an oxygen reservoir and inducing interaction with a Nb-doped SrTiOโ (NSTO) electrode, they stabilized the polarization characteristics of the Hfโ.โ Zrโ.โ Oโ (HZO) ferroelectric material. This resulted in a high tunneling electroresistance (TER) and improved switching stability and durability, paving the way for better performance in low-power, non-volatile memory devices.
This study not only clarifies the operating mechanism of FTJ devices but also enhances their long-term reliability by simultaneously controlling domains within the ferroelectric material and oxygen vacancies at the interface. The research is expected to significantly contribute to the development of future semiconductor technologies, including AI semiconductors, neuromorphic computing, and ultra-low-power non-volatile memory.
Originally published by Hankyoreh in Korean. Translated, summarized, and contextualized by our editorial team with added local perspective. Read our editorial standards.