Samsung Leads with First HBM4E Memory Chip Samples Sent to Customers

Samsung Electronics has taken a significant step forward in the high-bandwidth memory (HBM) market by commencing the shipment of samples for its cutting-edge HBM4E chips to customers. This marks the industry's first delivery of such advanced memory, giving Samsung a competitive edge in supplying essential components for AI accelerators used by major tech firms like Nvidia.

The newly developed HBM4E chips boast a computing speed that is more than 20% faster than their predecessor, the HBM4. These chips utilize the latest 1c DRAM technology, specifically the sixth-generation 10-nanometer class DRAM, combined with Samsung's 4nm foundry logic chip base. HBM technology enhances data transfer speeds and reduces power consumption by vertically stacking multiple DRAM layers, making it a crucial element for AI processors powering large language models like ChatGPT.

Samsung had previously announced its intention to deliver the first HBM4E samples in the second quarter. This rapid development, occurring just three months after the shipment of HBM4 chips, underscores the fast-paced evolution of the HBM market. By proactively providing samples of its latest products, Samsung aims to solidify its position in the next generation of AI memory.

Key players in the AI sector, including AMD, Nvidia, and Google, are among Samsung's clientele. The demand for faster and more efficient memory is surging as investments in AI infrastructure continue to grow. Meanwhile, another major memory manufacturer, SK Hynix, has stated its plans to begin mass production of HBM4E in 2027 and offer samples to customers in the latter half of this year, indicating a competitive landscape for next-generation AI memory solutions.

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Samsung said the new chip's computing speed is more than 20% faster than the previous HBM4 product.