Samsung to use High-NA EUV in DRAM production by 2028, expanding partnership with ASML

Samsung Electronics plans to bring next-generation High-NA extreme ultraviolet lithography equipment into advanced DRAM production in 2028.

It will mark the first time Samsung applies High-NA EUV to actual DRAM mass production. The company said on the 8th that it would expand cooperation with Dutch semiconductor equipment maker ASML toward that goal.

High-NA EUV is the next-generation lithography technology referenced in Samsung’s plan. The partnership is intended to support its introduction into advanced DRAM manufacturing by 2028.